to - 220 -3l 1. base 2. collector 3. emitter to-220 -3l plastic-encapsulate transistors KTA968A transistor (pnp) features z high transition frequency z high voltage applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -180 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -180 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-160v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a dc current gain h fe v ce =-5v, i c =-100ma 70 240 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -1.5 v base-emitter voltage v be v ce =-5v, i c =-500ma -1 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 30 pf transition frequency f t v ce =-10v,i c =-100ma 100 mhz classification of h fe rank o y range 70-140 120-240 symbol parameter value unit v cbo collector-base voltage -180 v v ceo collector-emitter voltage -180 v v ebo emitter-base voltage -5 v i c collector current -1.5 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 63 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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